Changes in Electrical Conductivity of ZnO with Hydrogen Implantation
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Hydrogen is a promising candidate for the impurity causing the n-type conductivity in ZnO. In this study hydrogen was introduced into the ZnO specimens by the ion implantation technique. The content of hydrogen was detected by the elastic recoil detection analysis (ERD). According to the ERD measurements, the counts of hydrogen increased after the implantation. The electrical conductivity of the hydrogen-implanted layer increased by about 9 orders of magnitude in case of the most resistive Cu-doped ZnO. The photoluminescence (PL) spectra for the Cu-doped ZnO were also measured, and the PL emission peak around 520 nm disappeared after the hydrogen ion implantation. The mechanism for such a hydrogen effect on the electrical conductivity of ZnO was discussed on the basis of the PL spectra and the DV-Xa molecular orbital calculation.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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