Anisotropy in Electrical Conductivity of (ZnO)5In2O3 Single Crystal Grown by a Flux Method
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Single crystals of (ZnO)5In2O3 were grown by means of the slow cooling method, using PbF2 as a flux, at reaction temperatures of 1050-1150°C and different cooling rates. The resulting flaky single crystals with a maximum area of 3×2 mm2 were very thin along the c-axis. Single crystal quality was evaluated by XRD, TEM, and SEM. The in-plane electrical conductivity (σ) was measured in the temperature range of 300 K to 1200 K in air. Band gap energy of (ZnO)5In2O3 single crystal was optically determined. Anisotropy of two orders of magnitude in electrical conductivity was first clarified.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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