Characterization of Ferroelectric (Y,Yb)MnO3 Films Prepared by Chemical Solution Deposition Method
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The (Y,Yb)MnO3 films were prepared on Pt/TiOx/SiO2/Si and Y2O3-buffered n-type Si(111) substrates using alkoxy-derived precursor solutions and followed by rapid thermal annealing in Ar. The (Y,Yb)MnO3 films crystallized to hexagonal phase and had high crystallinity and high degrees of c-axis orientation. It was found that the substitution of Y by Yb in YMnO3 lowered the crystallization temperature. The YbMnO3 film crystallized at 700°C in Ar showed good ferroelectric properties. The retention time was over 105 s and the polarization did not change after 1010 switching cycles. The leakage current density of the Pt/YbMnO3/Y2O3/Si capacitor was below 1.0×10-8 A/cm2 at an applied voltage of 5 V. The counterclockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the Pt/YbMnO3/Y2O3/Si capacitor.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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