Ferroelectric and Memory Characteristics of (Pb, La)(Zr, Ti)O3 Thin Films Crystallized by Hot Isostatic Pressing
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Ferroelectric properties and polarization fatigue characteristics of Pt/(Pb0.925La0.075) (Zr0.4Ti0.6)0.981O3 (PLZT)/PbTiO3 (PT)/Pt capacitors fabricated by crystallizing amorphous PLZT films at 500°C for 1 h under high pressures of 8.8-176.5 MPa using hot isostatic pressing (HIP) are investigated. The films HIP-treated under 26.1 MPa showed almost complete (001)-orientation and their degree of c-axis orientation, α, reached up to 0.99. The P-E hysteresis loops of films HIP-treated under 8.8-176.5 MPa gradually changed from a rectangular shape with a remanent polarization 2Pr=25.9 μC/cm2 and a coercive field 2Ec=76.8 kV/cm to a flat shape with 2Pr=9.8 μC/cm2 and 2Ec=54.4 kV/cm with increasing HIP pressure. The pulse-derived switchable polarization (Qsw) of all the samples HIP-treated under high pressure over 26.1 MPa hardly showed the fatigue degradation up to the switching cycles of 3×1010.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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