Forming Gas Anneal of Bi3.15Nd0.85Ti3O12 Ferroelectric Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
Polycrystalline Bi3.15Nd0.85Ti3O12 (BNdT) ferroelectric thin films were deposited on plantinized Si substrates by chemical solution deposition. The Bi-layered perovskite structure was achieved by rapid thermal annealing the spin-on films at 700°C for 3 min. Well-saturated hysteresis loops with remanent polarization (Pr) around 10 μC/cm2 were obtained on Pt/BNdT/Pt capacitors. The effect of forming gas (FG: 5%H2+95%N2) anneal on electrical properties and microstructures of BNdT films were characterized by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and electric measurements. Pr values were considerably suppressed after forming gas anneal at 400°C for 10 min. From structure characterization, it is deduced that the suppressed Pr was not due to decomposition of BNdT, but might be ascribed to the increased switching resistance due to formation of polar hydroxyl bonds by penetrated hydrogen ions bonded with oxygen ions.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
- Ferromagnetism in Fe doped ZnO synthesized by co-precipitation method
- Study on structural, magnetic and transport properties of La_Ca_Mn_Co_xO_3 (x = 0.01-0.05) thin films
- Fabrication of the finestructured alumina materials with nanoimprint method
- Correlation between the temperature of molten state and the SH intensity of 30BaO・15TiO_2・55GeO_2 crystallized glass
- Preparation of Pt particles dispersing nanocomposites by thermal treatment of tetrachloroplatinate/layered double hydroxide (LDH)