Characteristics of PZT Thin Film Modified by Strontium Substitution

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(Pb1-xSrx)(Zr1-yTiy)O3(PSZT, 0≤x≤0.2, 0.1≤y≤0.4) thin films were fabricated via the metallorganic solution deposition technique on Pt/Ti/SiO2/Si(100) substrates. Their crystal structure, microstructure and dielectric properties were investigated with variation of x and y contents. All films, regardless x and y contents, possessed a polycrystalline and dense microstructure with no evidence of secondary phase formation by annealing at 700°C. With increasing x, the lattice constant tended to be decreased and grain size became slightly larger, while the effect of strontium on dielectric properties was found to be different with y content. For the (Pb1-xSrx)(Zr0.6Ti0.4)O3 (y=0.4), k and Pr showed the decreasing tendency with increasing x. While for the y=0.2 film, k and Pr improved from 530 and 20 μC/cm2 to 1020 and 23 μC/cm2, respectively with adding x up to 0.1 and then decreased with further addition. Similar tendency was observed for the y=0.1 film ((Pb1-xSrx)(Zr0.9Ti0.1)O3) by substituting 0.05 mol of x. Especially the improvement in fatigue behaviors was apparently obtained by strontium (x) substitution into Zr-rich PZT (y=0.1, 0.2) films. These results were explained in terms of polarization characteristics occurring in the region of mixed electric phases.
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