Microwave Dielectric Properties of Sb2O5 Substituted BiNbO4 Ceramics
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The microwave dielectric properties of BiNb1-xSbxO4 ceramics were investigated as a function of Sb+5 substitution (0.01≤x≤0.1). BiNb1-xSbxO4 compositions containing sintering additives of 0.03 wt% CuO and 0.07 wt% V2O5 were prepared at low temperature (880°C∼960°C). Single orthorhombic (α-BiNbO4) phase in all BiNb1-xSbxO4 compositions was obtained under all sintering temperature. The dielectric constant (εr) ranged from 41.8 to 44.7 according to Sb content. The Q•f0 values of BiNbxSb1-xO4 ceramics ranged from 14,000 to 42,000. As increasing the Sb content, the temperature coefficient of resonant frequency (τf) was shifted to negative value between -7 ppm/°C and -26 ppm/°C.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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