In-situ TEM Investigation of Structural Change of Zirconia/Silicon Heterostructure
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概要
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Crystallization process of YSZ thin film has been in real-time investigated by in-situ heating TEM method from plan-view and cross-sectional directions. YSZ layer has been crystallized by the nucleation and growth mechanism. Nucleation has been started from the surface region of YSZ layer. 1.4 nm SiOx layer on the surface of Si substrate has been effective for strain relaxation around the interface between YSZ layer and Si substrate. Activation energy of the crystallization of YSZ/Si films has been 416 kJ/mol.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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