Fabrication of Glass Passivation Films for Power Devices by Screen Printing and Their Characterization

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Surface passivation with glass frits, which is aimed at reducing the unstable influence of the semiconductor surface on the electrical behavior, is used for high voltage silicon power devices. In this study, PbO-Al2O3-SiO2 glass was prepared by sol-gel process, and its properties were studied by differential thermal analysis (DTA), X-ray diffraction (XRD) and particle size analysis (PSA). Glass passivation films were made on the silicon surface by screen-printing. Heat-treated glasses and glass/silicon interfaces were analyzed by XRD, thermal mechanical analysis (TMA), and capacitance-voltage (C-V) curve of a metal-insulator-semiconductor (MIS) structure. The coefficient of thermal expansion (CTE) of the heated glass at 820°C showed the value of 3.0×10-6 K-1 equal to that of Si wafer. It is found that the CTE of the glass similar to that of the Si wafer is important factor to obtain reliable C-V curves with MIS structure.
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