Room Temperature 1.54 μm Light Emission from Er-Doped Epitaxial ZnO Thin Film
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Er-doped epitaxial ZnO thin films were prepared on the Al2O3(0001) substrates by reactive RF magnetron sputtering using a metal Zn target and a gas mixture of oxygen and argon at 600°C. Er was doped by sputtering an Er2O3 target during the ZnO deposition. 1.54 μm light emission intensity was ten times larger than that of Er2O3 powder. Dependence of the photoluminescence intensity on excitation light power and wavelength concluded that indirect excitation by energy transfer from the ZnO to the Er is effective in enhancing light emission.
- 公益社団法人 日本セラミックス協会の論文
公益社団法人 日本セラミックス協会 | 論文
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