Surface Morphology of AlN Films Grown on an Atomically Flat 6H-SiC(0001) Prepared by Removing the Graphite Layer after Annealing in Vacuum

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AlN film grown on SiC is a good candidate as the substrate for nitride high-power devices because of high thermal conductivity. The AlN film grown on an atomically flat 6H-SiC(0001) surface using molecular beam epitaxy has no pits and shows the steps corresponding to the 6H-SiC unit cell height. The flat SiC surface was obtained by removing the graphite layer formed in vacuum annealing. Surface roughness of the AlN film, RMS of 0.4 nm, was significantly improved compared to the value, RMS of 1.5 nm, on the as-received SiC surface which includes a large number of pits and scratches derived from native polishing damages on the SiC substrate. The atomically flat SiC and AlN surfaces showed 1×1 reconstructed RHEED pattern. The residual carbon on the SiC surface after this etching process did not affect on the AlN morphology.
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