The Thermodynamic and Kinetic Consideration of Formation Mechanism of β-SiC Thin Film from Carbon Dense Film and SiO Gas

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A thin film including beta-silicon carbide (β-SiC) was synthesized by carbon silicification through a reaction between gaseous silicon monoxide (SiO) gas and carbon source derived from polyimide film (PIF). The sample obtained had film shape similar to that of the carbon source film. Two reacted regions were found on both surfaces of the carbon source film, as well as the un-reacted region in the middle of the sample with less than 3 h synthesis time. Formation mechanism of β-SiC film formed by the reaction between SiO gas and carbon source film at 1400°C was investigated based on relationship among SiC conversion ratio, reaction time and atmospheres. Formation processes were simulated thermodynamically and kinetically by the calculations solving differential equations concerning with a rate of chemical species. Results of the simulated curves for the SiC conversion ratio calculated from 6 chemical equations, 12 rate constants, 2 diffusion constants, 9 chemical species and 9 differential equations have a good agreement with the experimental results of the SiC conversion ratio as a function of reaction time.
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