Photocarrier Injection to Transition Metal Oxides
スポンサーリンク
概要
- 論文の詳細を見る
An efficient and clean method of doping transition metal oxides (TMOs) with hole carriers is presented. We have fabricated oxide heterostructures made of various TMO thin films grown on <I>n</I>-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. It is shown that the resistance of the insulating TMOs is reduced significantly with increasing light irradiance, as a result of photoinduced hole carrier injection from the titanium oxide substrates. A generic band structure for the heterojunctions is proposed, in which a large potential slope and a small barrier exist near the interface for photoinduced holes and electrons in the titanium oxides, respectively. This photocarrier injection (PCI) technique would provide us with a useful method to achieve the external control of hole carrier density in TMOs.
- THE PHYSICAL SOCIETY OF JAPANの論文
THE PHYSICAL SOCIETY OF JAPAN | 論文
- Ladder lattice model of soft optical phonon
- Quantum Spin-Hall Effect in a Quantum Wire
- Spin Current Generated from A Quantum Dot Driven by Pulsed Magnetic Resonance: Real-Time Spin Dynamics
- Spin-Current-Driven Spin Pumping in Rashba Spin-Orbit Coupled Systems : A Spin Torque Effect
- Analysis of XY model with mexican-hat interaction on a circle : Derivation of saddle point equations and study of bifurcation structure