Voltage Noise of an Amorphous MoxSi1-x Film near the Superconducting Transition in Magnetic Fields.
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概要
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The voltage noise S<SUB>V</SUB>(f) in a thick amorphous Mo<SUB>x</SUB>Si<SUB>1-x</SUB> film is studied over a broad frequency range spanning six decades (f=0.1, Hz--100, kHz) in magnetic fields just above and below the melting field, as a function of a steady current. The origin of the low-frequency (f≈ 0.1--10, Hz) noise observed near the zero-resistance region is mainly due to temperature fluctuations and the contribution due to flux motion is very small. In contrast, S<SUB>V</SUB>(f) at higher frequencies (f≈ 10, Hz--100, kHz) appears to be dominated by the flux motion. These results are compared with recent experiments on YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7-δ</SUB> films.
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