Oligothiophene Organic Transistors Using Poly(3-hexylthiophene) Fabricated by Spin Coating
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Top contact organic field-effect transistors (OFETs) based on a composite of α,ω-dihexylsexithiophene (DH-6T) using poly(3-hexylthiophene) (PAT6) with the same thiophene backbone were fabricated by spin coating using an annealing solution of PAT6 and DH-6T. The size of grains with a sphere like morphology increased with the mass percentage of DH-6T in the composite. In the case of a DH-6T composite of more than 80 weight (wt) %, the field-effect mobility of the OFET rapidly increased. An OFET with an 89 wt % DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.028 cm<SUP>2</SUP>/(V s). The DH-6T molecules of OFETs fabricated by spin coating were oriented in the layer with their long axis tilted to the upright direction perpendicular to the substrate plane. We demonstrated that it is possible to achieve high field-effect mobility and a high on/off ratio of the OFET using soluble DH-6T with PAT6 composites fabricated by spin coating.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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