Electrical Properties of (Ca,Sr)Bi4Ti4O15 Thin Films Fabricated Using a Chemical Solution Deposition Method
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Thin films of calcium-strontium bismuth titanate (Ca<SUB>1−<I>x</I></SUB>Sr<I><SUB>x</SUB></I>)Bi<SUB>4</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> solid solution were fabricated on (111)Pt/Ti/SiO<SUB>2</SUB>/(100)Si substrates by a chemical-solution deposition (CSD) technique. These films had <I>x</I>=0–1.00 and consisted of a polycrystalline structure with random orientation of the bismuth layer-structured ferroelectric (BLSF) crystal (<I>m</I>=4). The relative dielectric constants of (Ca<SUB>1−<I>x</I></SUB>Sr<I><SUB>x</SUB></I>)Bi<SUB>4</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> films were enhanced from 40 to 220 with increasing <I>x</I>; these values did not vary significantly with changes in the measuring frequency and the bias field. The temperature coefficient of the relative dielectric constant at around room temperature became larger with increasing <I>x</I> from 0 to 1.00; the change in the dielectric constant of these film between 30–100°C increased from 2% to 15%.
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公益社団法人 応用物理学会 | 論文
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