アモルファズSi密着型イメージセンサ
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概要
- 論文の詳細を見る
A contact linear image sensor using amorphous Si : H has been developed. The sensor is composed of a pair of LED array, a rod lens array and a document size linear image sensor in which a-Si : H photosensor array and driving ICs are fabricated on the same glass substrate.The amorphous Si : H sensor has ITO/p-a-SiCx : H/a-Si : H/metal heterojunction diode. It exhibits as high as 104 photo-to-dark current ratio and small operation voltage because of excellent blocking characteristics and large built-in potential of the heterojunction.The contact sensor has been operated with 1 msec/line scanning speed. As high as 30 dB SN ratio and 3--4% image lag for both yellow-green LED and red LED have been obtained. Images have been satisfactorily recorded.
- The Imaging Society of Japanの論文
The Imaging Society of Japan | 論文
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