Effect of Cu Doping into the Ga Site on the Thermoelectric Properties of AgGaTe<SUB>2</SUB> with Chalcopyrite Structure
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概要
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In the present study, the effect of Cu doping into the Ga site on the thermoelectric properties of AgGaTe<SUB>2</SUB> with chalcopyrite structure was investigated. The samples of AgGa<SUB>1-<I>x</I></SUB>Cu<SUB><I>x</I></SUB>Te<SUB>2</SUB> (<I>x</I>=0, 0.5, and 0.1) were prepared by a solid-state reaction followed by hot pressing. The electrical resistivity, Seebeck coefficient and thermal conductivity were measured from room temperature to about 680 K. The Cu doping increased the carrier concentration, leading to enhancement of the dimensionless figure of merit <I>ZT</I> of AgGaTe<SUB>2</SUB>. The maximum <I>ZT</I> value was 0.45 at 680 K obtained in AgGa<SUB>0.9</SUB>Cu<SUB>0.1</SUB>Te<SUB>2</SUB>, which was approximately two times higher than that of stoichiometric AgGaTe<SUB>2</SUB>.
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