Plasma resistance of Y₂O₃ nanofllms on quartz with different interlayer deposited by EB-PVD

概要

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The Y2O3 films were deposited on quartz plates using an electron beam (EB) evaporation method with different interlayer. The two types of interlayer, which were compositionally graded and alternated stacks of Y2O3 and SiO2 layer, were applied with the intent to prevent flaking of the coating due to a thermal mismatch between the Y2O3 film and quartz substrate. The field emission scanning electron microscopy (FESEM) analysis indicated that the Y2O3 film with interlayer which consisting of alternated stacks of Y2O3 and SiO2 layer, shows more structural stability, no crack propagation or flaking of the top layer, than other film samples. The plasma resistance of the Y2O3 films was analyzed by a plasma etching test using inductively coupled plasma (ICP) conditions with a gas mixture of CF4/O2. The etching resistance of the Y2O3 films was evaluated by measurement of etching depth. The etching depths of Y2O3 films with interlayer were shown as 20 times lower than quartz plate.
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