ＩＣＢ法によるアモルファスＧｄＦｅ：Ｂｉ磁性薄膜の特性
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The structural and magnetic properties of Bi-doped GdFe films prepared by ionized cluster beam (ICB) technique have been studied by means of X-ray scattering and ferromagnetic resonance (FMR). Preparation of amorphous Bi-doped GdFe films was made by the deposition of Gd and Fe clusters and simultaneous evaporation of Bi onto a glass substrate. In this study, only Fe clusters were ionized. Caluculated reduced density function G(γ) of films shows that the nearest-neighbour bonding peaks are broad as compared with pure GdFe films. The observed peaks in the G(γ) shift clearly toward longer distance by annealing, suggesting the increase of Gd-Bi pairs and the decrease of Fe-Bi pairs. The internal effective field (Heff = 2Ku/Ms−4πMs) of as grown Bi-doped GdFe films is larger than that of pure GdFe films, and is able to be positive by annealing. It is concluded that the production of atomic pairs, whose interatomic distance is larger than the Gd-Fe interatomic distance (3.2 Å), are responsible for the increase of Heff.
- 社団法人 日本磁気学会の論文
社団法人 日本磁気学会 | 論文
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