Experimental demonstration of a ferroelectric FET using paper substrate
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概要
- 論文の詳細を見る
A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).
- The Institute of Electronics, Information and Communication Engineersの論文
The Institute of Electronics, Information and Communication Engineers | 論文
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