人工ピン止め点(APCs)を導入したYBCO 薄膜の表面抵抗の磁場依存性:―人工ピン止め点導入による磁場中表面抵抗の低減―
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We investigated the effect of introducing artificial pinning centers (APCs) into YBCO thin films to reduce the Rs in a high magnetic field. YBCO thin films with and without APCs were deposited on MgO(100) substrates by using the pulsed laser deposition (PLD) technique. We used BaMO3 (BMO, M = Zr, Hf) doped YBCO targets. The Rs of thin films was measured at 21.8 GHz with the dielectric resonator method and a DC magnetic field of up to 5.0 T. The Rs values of 1.5 wt. % of the BHO doped films were approximately 1/2 compared with that of the Rs of the pure YBCO films. As a result, YBCO thin films with APCs could provide advantages for NMR application.
- 公益社団法人 低温工学・超電導学会 (旧 社団法人 低温工学協会)の論文
公益社団法人 低温工学・超電導学会 (旧 社団法人 低温工学協会) | 論文
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