Organic Single-Crystal Transistors with Secondary Gates on Source and Drain Electrodes
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Rubrene and tetracyanoquinodimethane single-crystal transistors are fabricated incorporating secondary gates (split gates) on source and drain electrodes to reduce the interfacial barriers at the metal/semiconductor contacts. Separating the effect of the injection barriers, the intrinsic carrier transport in the semiconductor channels is extracted for the p-type rubrene crystal transistors and the n-type tetracyanoquinodimethane crystal transistors. The transconductance of the tetracyanoquinodimethane devices is drastically improved by activating the split-gate electrodes, indicating significant injection barriers in the n-type transistors. The result demonstrates that the technique is useful to improve transistor performance when it is restricted by the injection barriers. [DOI: 10.1380/ejssnt.2008.138]
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
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