Deposition of Si3N4 on steel substrate by plasma discharge.

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概要

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• Conditions favorable to the deposition of Si3N4 on pure steel substrates by means of an inductively coupled, externally heated plasma discharge were determined, and comparisons made with reducedpressure CVD. A push-pull Hartley RF (13.56MHz) oscillator with a maximum output of 70W was designed using a triode. The reactive gases-NH3 and SiN4-were diluted with Ar to a prescribed concentration. Test pieces of pure steel measuring 5×5×0.5mm were prepared, their surfaces were polished using diamond paste, and the Si3N4 was deposited onto the surfaces.It was found that the optimum distance between the test pieces and the oscillator electrode was 25cm, and the optimum ratio of NH3 and SiH4 gases was 1:2.5. Investigating the effect of reaction temperature and deposition time under these conditions, it was found that in the case of plasma CVD, 800°C was a boundary value above which film thickness decreased, while the rate of film growth varied with deposition time depending on whether the reaction temperature was below or above 750°C. Comparison with reduced-pressure CVD indicated that this was due to the effect of Coulomb discharge, and it was found by differential thermal analysis and X-ray diffraction that in Si3N4 at 746°C or less, deposits were amorphous.Further, at 800°C, film growth proceeded rapidly, reaching 12.5μm after 30min but thereafter decreased and was only 15μm after 240min. In reduced-pressure CVD, film growth proceeded linearly for 60min and thereafter almost linearly although with a decreased slope, reaching 12.5μm after 240min at 800°C.Investigation of the apparent activation energy of the growth of the Si3N4 including a diffusion layer in the initial reaction period gave a value of 20kcal/mol at 750°C or less for plasma CVD, and 12 kcal/mol at 700-800°C for reduced pressure CVD.

• 社団法人 表面技術協会の論文

社団法人 表面技術協会 | 論文

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