Measurements of oxide film thicknesses on the worked surfaces of silicon and aluminum by Auger electron spectroscopy.
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It has been reported, that the thickness of oxides on Si or Al can be determined up to about 120Å, using Auger electron spectroscopy, without ion-milling depth profiling, by using the ratio of the chemically shifted and unshifted peaks from the oxide asd the substrate, respectively. These measurements can be difficult, however, when the resolution of the apparatus is insufficient. Calculation of the ratio by a micro-computer was carried out, and very good coincidence was obtained between the experimental and composed spectra. Film thicknesses are obtained more accurately by using the present method.
- 社団法人 表面技術協会の論文
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