宇宙空間における球状結晶成長の計算機シミュレ-ション

概要

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Recent progress in integrated circuit technology requires the high quality silicon crystal. A significant property of the silicon crystal is the uniform distribution of intentionaly doped impurity. However, the usual silicon crystal has the nonuniformity such as the impurity striation, which is not desirable to produce the VLSI. The impurity striation is considered to be formed during the crystal growth with the convection. To understand the mechanism of the nouniform impurity incorporation, authors have been planned the spherical silicon crystal growth in space without convection.To perform the experiments in space successfully with a few attempts, preparatory experiments for various conditions are indispensable. But the circumstance of nongravity can not be realized on earth in long time, and only the examination with computer simulation might be available.This paper deals with the computer simulation of spherical crystal growth in space. First, the crystal growth process is discribed by partial differential equations with the moving boundary. Secondly, these equations are solved by using the implicit difference form with the variable grid method. Finally, the simulation results provide us the fundamental knowledges about the temperature distribution, the total experiment time and the accuracy of temperature control law to design the experiment system.
公益社団法人計測自動制御学会の論文