培養骨芽細胞に対する半導体レーザー照射の影響に関する実験的研究

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This study was carried out to clarify the effects of low-energy laser, diode laser (wavelength: 890nm, output power: 0.339mW) irradiation on osteoblastic cell activity. In addition, we investigated the influence of presence of the implant body on osteoblastic cells. We used the human osteoblastic cells (HUO9, O9N2, YT-48). These cells were cultured in a RPMI-1640 medium supplemented with 2mM ascorbic acid, 2mM α-glycerophosphate and 10% fetal calf serum. Irradiation time (density) were 1min (0.6mJ/cm2), 2min (1.2mJ/cm2), 3min (1.8mJ/cm2), 5min (3.0mJ/cm2), 7min (4.2mJ/cm2), 10min (6.0mJ/cm2), 12min (7.2mJ/cm2), 15min (9.0mJ/cm2). As the result, proliferation of these cell were not stimulated by the laser irradiation, but the presence of the implant body were not inhibited them. Alkaline phosphatase activity of HUO9 and O9N2 were decreased by laser irradiation (irradiation density, more than 6.0mJ/cm2). But YT-48 was not inhibited.
日本レーザー歯学会の論文