Hot Electron Effect in Si(111) Inversion Layer at Low Temperatures
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概要
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The rate of electron energy loss to surfons in Si(111) inversion layer is found theoretically to be given by −〈dε⁄d<I>t</I>〉=λ<I>T</I><SUB>e</SUB><SUP>5</SUP> for very low lattice temperature <I>T</I><<<I>T</I><SUB>e</SUB><<4×[<I>N</I><SUB>s</SUB>⁄(10<SUP>12</SUP>cm<SUP>−2</SUP>)] K irrespective of the phonon modes, the relation being the same as the one we found previously for the (100) surface. The relation as deduced from Ono <I>et al.</I>'s experiment (<I>T</I>=10 mK, <I>T</I><SUB>e</SUB>\lesssim2 K, <I>N</I><SUB>s</SUB>=1.6×10<SUP>13</SUP> cm<SUP>−2</SUP>) agrees well with our prediction in the <I>T</I><SUB>e</SUB>-dependence, but not in the value of λ.
- 社団法人 日本物理学会の論文
社団法人 日本物理学会 | 論文
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