Impurity Conduction in Compensated P-Germanium at Large Strain Limit

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概要

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• The strain dependence of impurity conductivity has been measured in compensated p-type germanium containing 5×10<SUP>15</SUP> to 1.2×10<SUP>16</SUP> impurity atoms/c.c. using large uniaxial compression. For both 〈100〉 and 〈111〉 compression the ground state orbital of acceptor was found to have an ellipsoidal envelope along the stress direction and was enlarged. Impurity resistivity decreases linearly in a log-log plot of the resistivity versus the inverse strain when the stress is large enough to split off the degenerated valence bands.<BR>The decrease of resistivity shows a large difference between the cases of 〈100〉 and 〈111〉 stress, whereas the difference by the impurity concentration is small.<BR>Some clues for the mechanism of impurity conduction in the intermediate impurity concentration region may be found in this experiment.

• 社団法人 日本物理学会の論文

社団法人 日本物理学会 | 論文

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