Photo-anisotropic Elastic Method Using Silicon Single Crystal

概要

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Crystallographic conditions for photoelastical measurement of stresses induced in a silicon single crystal plate are made clear by numerical calculations. It is found that the coordinate system of the plate is specified depending on an incident light direction. Mechanical anisotropic properties of the plate are also calculated for the case where the plate has an elastically symmetrical axis in its plane. It is found that the variation of the mechanical anisotropy is small. Experiments on silicon cantilever in bending are performed by using an infrared photoelastic method. Experimental results show that the silicon single crystal plate can be used as a photo-anisotropic elastic material.
日本実験力学会の論文