Effect of Microstructure on the Stability of the Electrical Properties of BaTiO3-Based Dielectric Materials.
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概要
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Degradation of capacitance and insulation resistance under DC field has been studied with special reference to the microstructure of BaTiO<SUB>3</SUB>-based dielectric materials for Ni-electrode multilayer ceramic capacitors. The presence of dislocation loops, of which formation is pronounced by the low oxygen partial pressure of the ambient atmosphere during firing, has a deleterious effect on the life of insulation resistance under highly accelerated life testing. Tetragonality and the MnO-content are the decisive factors of the deterioration in capacitance under DC field. Dielectric materials composed of BaTiO<SUB>3</SUB>, MgO, CoO, MnO, and Ba<SUB>0.4</SUB> Ca<SUB>0.6</SUB> SiO<SUB>3</SUB> showed superior stability in capacitance.
- 日本素材物性学会の論文
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