Electrical Properties of Polyimide Langmuir-Blodgett Films and fabrication of tunnel junctions

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Thermally stable multilayer films of polyimide were prepared on noble metal base electrodes by using the Langmuir-Blodgett technique. Here, the monolayer thickness of the multilayer polyimide Langmuir-Blodgett films was about 0.4 nm. We have examined the electrical properties of Au/PI/Au and Au/PI/Pb-Bi tunnel junctions.<BR>For Au/PI/Au junctions, it was found that we could get ultrathin polyimide Langmuir-Blodgett films having a good electrical insulating property when the number of deposited polyimide layers is greater than about 30. The electrical conduction mechanism through polyimide Langmuir-Blodgett films was concluded to be ruled by the well-known tunneling theory.<BR>For Au/PI/Pb-Bi junctions, typical I-V characteristics of tunnel junctions were obtained at a temperature below the critical temperature of a superconductitg Pb- Bi alloy, when the number of deposited polyimide Langmuir-Blodgett films was 27. It was also concluded that the electrical conduction mechanism through Polyimide Langmuir Blodgett films was ruled by the B. C. S. theory.<BR>From thses experimental results descrided above, we found that polyimide Langmuir-Blodgett films were very useful electrical insulating materials, having a thickness of less than several tens of nm.
日本素材物性学会の論文