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NiO surface prepared by the thermal oxidation (720°C, in the air, 15min.) has the characteristic of a p-type semiconductor electrode of being photosensitive. This property appears more certainly when the substrate was plated with Ni before the thermal treatment, because of increasing of the effective surface area. It is estimated that the band gap of this NiO is over 3.54eV from the action spectrum of the cathodic photocurrent at the potential of 0.5V vs. Ag/AgCl, Cl-. The value of the photocurrent increased with the concentration of the oxidants added to the solution, but decreased in the case of the colored oxidants, probably because of the absorption of light in the shorter range of wave length. The value of the photocurrent ip is related to the intensity of light I1 by the Tributch's relation; ip∝I1/2·1The Mott-Schottky plots obtained from the value of differential capacitance showed a straight line in the region of -0.7-0.9V and the value of flatband potential was 0.85-0.95V vs. Ag/AgCl, Cl-. Furthermore the pH dependency of the flatband potential showed a well correlated straight line with a slope of -60mV/pH. The durability of this electrode against cathodic over polarization was superior to anodic, contrary to our expectations.
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