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The copper films of 6-10μm in thickness were ion plated on steel substrates under various process conditions using a diode system which employs the electric resistance melting of source materials. The ion plated copper films were found to contain considerable amounts of preffered orientation Cu plane (111) by biasing the substrate negatively. The grain size also decreased with increasing the substrate negative bias voltage up to 2kV. Scanning electron microscopy showed that in the ion plated copper films zone-boundary temperatures T1 and T2 were shifted to lower values as compared with those of Movchan and Demchishin model in a vacuum evaporation. It was suggested that an ion bombardment under the ion plating affected the crystallographic orientation and the structure of the copper films.
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