Two-Dimensional Localization Effect with Spin-Orbit Scattering in Arsenic Doped Polycrystalline Silicon Films
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We have investigated the 3D–2D crossover of the localization effect in a system of heavily arsenic doped polycrystalline silicon films with thickness 40 to 1350 Å. The films with <I>d</I>≤220 Å show a log <I>T</I> dependence of the conductance. For a 220 Å film, ∼60% of the quantum correction to the conductivity is attributed to the electron-electron interaction effect, and the rest to the localization effect. Analyses of the magnetoconductance behavior have indicated that a weak spin-orbit scattering should be taken into account in the localization effect; a feature not observed in n-type bulk Si. The diffusion length of the spin-orbit scattering is estimated to be 0.28 μm. The inelastic scattering time τ<SUB>in</SUB> for the 220 Å film varies as <I>T</I><SUP>−0.95</SUP>, indicating that the electron-electron scattering is the dominant phase breaking process in the present dirty 2D systems.
- 社団法人 日本物理学会の論文
社団法人 日本物理学会 | 論文
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