Diffusivity of Self-Interstitials and Vacancies in Silicon
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概要
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In my previous paper [Jpn. J. Appl. Phys. <B>31</B> (1992) 965], the self-interstitial and vacancy concentrations in silicon were obtained as a function of the diffusion time by analysing the experimental data for oxidation-enhanced/retarded diffusions of P/Sb. Using these results and the approximate solutions obtained from well-known diffusion equations of self-interstitials and vacancies, the self-interstitial and vacancy diffusivities, i.e., <I>D</I><SUB>I</SUB>=2.3×10<SUP>−9</SUP> cm<SUP>2</SUP>/s and <I>D</I><SUB>V</SUB>=2.3×10<SUP>−10</SUP> cm<SUP>2</SUP>/s, are determined at 1100°C. Furthermore, the thermal equilibrium concentrations of self-interstitials and vacancies, i.e., <I>C</I><SUB>I</SUB><SUP>0</SUP>=3.4×10<SUP>16</SUP> cm<SUP>−3</SUP> and <I>C</I><SUB>V</SUB><SUP>0</SUP>=2.1×10<SUP>17</SUP> cm<SUP>−3</SUP>, are also determined.
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公益社団法人 応用物理学会 | 論文
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