Metalorganic Vapor Phase Epitaxy of CuGa(S<I><SUB>x</SUB></I>Se<SUB>1−<I>x</I></SUB>)<SUB>2</SUB> Lattice-Matched to GaP (100)
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CuGa(S<I><SUB>x</SUB></I>Se<SUB>1−<I>x</I></SUB>)<SUB>2</SUB> epitaxial layers were grown on GaP (100) substrates by metalorganic vapor phase epitaxy. The alloy composition of the grown layers was controlled by the transport rates of H<SUB>2</SUB>S and H<SUB>2</SUB>Se. A dramatic improvement in the crystalline quality of the CuGa(S<I><SUB>x</SUB></I>Se<SUB>1−<I>x</I></SUB>)<SUB>2</SUB> layer lattice-matched to the substrate was evidenced by the narrow linewidth of the double-crystal X-ray rocking curve and the smooth surface. The lattice-matching conditions can be discussed in terms of crystal orientation, lattice parameter and thermal expansion coefficient.
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公益社団法人 応用物理学会 | 論文
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