Metalorganic Chemical Vapor Deposition of BaTiO<SUB>3</SUB> Films on MgO(100)
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概要
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BaTiO<SUB>3</SUB> thin films were prepared on MgO(100) substrates by chemical vapor deposition using barium β-diketonate {Ba(C<SUB>11</SUB>H<SUB>19</SUB>O<SUB>2</SUB>)<SUB>2</SUB>} and titanium tetraisopropoxide {Ti[OCH(CH<SUB>3</SUB>)<SUB>2</SUB>]<SUB>4</SUB>} as metalorganic precursors. BaTiO<SUB>3</SUB> films deposited at 800–1000°C showed prominent <I>a</I>-axis orientation perpendicular to the substrate surface. The deposition rate of these films was 1.0–1.2 μm/h. The rocking curve of BaTiO<SUB>3</SUB>(200) reflection from the film deposited at 800°C indicated strong crystallographic orientation. The epitaxial relationship between the film and the substrate was found by X-ray pole figure analysis. The relative dielectric constant of a polycrystalline BaTiO<SUB>3</SUB> film prepared on a Pt(100)/MgO(100) substrate at 800°C was 1040 (10 kHz, 20 V/cm).
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公益社団法人 応用物理学会 | 論文
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