Deep-Level Transient Spectroscopy Spectra of Drain Current of Si-Implanted GaAs Metal-Semiconductor Field-Effect Transistors Having Large and Small Low-Frequency Oscillations
スポンサーリンク
概要
- 論文の詳細を見る
We report on the drain-current (Id) Deep-level transient s-pectroscopy (DLTS) spectra of Si-implanted metal-semiconductor field effect transistors (MESFETs) with strong or weak Id low-frequency oscillations (LFOs) under the condition of high drain voltages (3 V–7 V). We found no distinguishing features directly related to the Id-LFO in these spectra having large peaks characteristic of the DLTS spectrum. These results imply that deep centers in the MESFET channel layer are not the direct origin of the Id-LFO.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel