Platinum-Platinum Oxide Gate pH ISFET
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概要
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Platinum-platinum oxide gate ISFETs (ion sensitive field effect transistors) have been designed and fabricated for a stable pH microsensor. The platinum oxide layer, formed by a new fabrication process using an RF sputtering technique, was identified as PtO<SUB>2</SUB> by X-ray photoelectron spectroscopy. The pH response of the platinum-platinum oxide gate ISFET was linear in the pH range between 1 and 10, and a sensitivity of 40.5±4.0 mV/pH was obtained. The ISFET developed had better stability than a conventional Si<SUB>3</SUB>N<SUB>4</SUB> bare gate ISFET.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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