Design and Analysis of the Reference Cells for STT-MRAM

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概要

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• STT-MRAM is currently under intense R&D efforts thanks to its high performances such as non-volatility, fast access speed and high density etc. However, it suffers from intrinsic stochastic switching behaviors and high sensitivity to process variations, which make low power reliable reading become a big challenge. This letter presents three designs of reference cell for STT-MRAM sensing. By using an accurate compact model of STT-MRAM cell, we analyze and compare their performances in terms of power, reliability and area.

著者

• ZHANG Li

  School of Chemical Engineering and Technology, China University of Mining and Technology

• Tang Hualian

  School of Microelectronic, Xidian Univ.

• Zhao Weisheng

  IEF, Univ.

• Zhuang Yiqi

  School of Microelectronic, Xidian Univ.

• Bao Junlin

  School of Microelectronic, Xidian Univ.

• Li Cong

  School of Microelectronic, Xidian Univ.

• Xiang Xin

  Engineering College, Air Force Engineering Univ.

• Zhang Li

  School of Microelectronic, Xidian Univ.

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