HVIC用SOI型1200Vレベルシフト素子の開発

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概要

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• We have developed monolithic SOI type 1200V level shifters for inverter driver ICs, which are based on a new design concept of cascaded 120V LDMOSFETs. In order to clarify the problem of blocking voltage lowering against a high dV/dt surge, we have analyzed transient behavior of monolithically cascaded LDMOSFETs by numerical simulations and experiments. As a result, we have established a new design concept including device layouts and circuits, which minimizes breakdown voltage lowering at very high dV/dt of 20kV/μs. This concept is expected to be a key technology enabling 1200V SOI inverter driver ICs for harsh applications such as automotive electronics.

著者

• 山田 明

  Semiconductor Process R&D Dept., DENSO CORP.

• 白木 聡

  Advanced Electric Technology R&D Dept., Powertrain Control Systems Business Group, DENSO CORP.

関連論文

• HVIC用SOI型1200Vレベルシフト素子の開発

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