Effect of Surface Morphology on Ionic Response of Reference Field Effect Transistor

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概要

• 論文の詳細を見る

• Fabricating reference field effect transistor (FET) sensors instead of reference electrodes are important for the miniaturization and variegated applications of FET sensors. To make a reference FET, the gate surface of FET was modified with the self-assembled monolayer (SAM) of n-octadecyltrimethoxysilane (ODS). Though an ODS-SAM FET had low pH-sensitivity, it was cation-sensitive. This work demonstrates the relation between the surface morphology and the cationic and pH-sensitivity of ODS-SAM FETs. A roughness parameter of atomic force microscope images, the mean summit curvature (Ssc) has correlation with the cationic and pH-sensitivity of ODS-SAM FETs.

• 公益社団法人 電気化学会の論文

著者

• OSAKA Tetsuya

  Institute for Biomedical Engineering, Waseda University

• Osaka Tetsuya

  Institute For Biomedical Engineering Waseda University

• KUROIWA Shigeki

  Institute for Biomedical Engineering, Waseda University

• Kuroiwa Shigeki

  Institute For Biomedical Engineering Waseda University

• SHIBASAKI Tomomi

  Graduate School of Advanced Science and Engineering, Waseda University

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• Effect of Surface Morphology on Ionic Response of Reference Field Effect Transistor

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