High-Frequency Precise Characterization of Intrinsic FinFET Channel

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概要

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• This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

著者

• Ishikuro Hiroki

  Keio Univ. Yokohama‐shi Jpn

• Sakai Hideo

  Keio University

• MATSUKAWA Takashi

  AIST

• ENDO Kazuhiko

  AIST

• LIU Yongxun

  AIST

• TSUKADA Junichi

  AIST

• ISHIKAWA Yuki

  AIST

• NAKAGAWA Tadashi

  AIST

• SEKIGAWA Toshihiro

  AIST

• KOIKE Hanpei

  AIST

• SAKAMOTO Kunihiro

  AIST

• MASAHARA Meishoku

  AIST

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