Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection
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概要
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3dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.
著者
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Kobayashi Wataru
Ntt Photonics Laboratories Ntt Corporation
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YASAKA Hiroshi
Research Institute of Electrical Communication, RIEC, Tohoku University
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ISHIHARA Hiroki
Research Institute of Electrical Communication, RIEC, Tohoku University
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SAITO Yosuke
Research Institute of Electrical Communication, RIEC, Tohoku University
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- Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection