Electrical conductivity of black phosphorus-germanium compound.
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概要
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Single crystals of a new material, black phosphorus doped with germanium, have been prepared by a bismuth-flux method. Germanium atoms are incorporated into the black phosphorus in 2 to 4 atomic percent. The resistivity is reduced by two to three orders (ρ=6×10<SUP>−3</SUP> Ω cm) compared with the pure black phosphorus, and its temperature dependence is metallic at low temperatures. There is no magnetoresistance up to 12 T at 0.6 K in striking contrast to the pure black phosphorus which shows negative magnetoresistance in this region. The crystal lattice constants decrease with germanium doping, especially in the interlayer direction. These facts indicate the enhanced three dimensionality with germanium doping.
- 公益社団法人 日本化学会の論文
著者
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Maruyama Yusei
Institute for Molecular Science
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Oshima Kokichi
Department Of Physics Faculty Of Science Osaka University
-
Inabe Tamotsu
Institute for Molecular Science
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He Lin
Institute for Molecular Science
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Terui Toshifumi
Graduate University for Advanced Studies
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