Insulator-to-Metal-to-Semiconductor Transitions of One-Dimensional Bis(1,2-dione dioximato)Pt(II) Complexes at High Pressures.
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概要
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The electrical resistivities and absorption spectra of one-dimensional bis(1,2-dione dioximato)Pt(II) have been studied at high pressures. The resistivities of needle crystals of Pt(dmg)<SUB>2</SUB> and Pt(bqd)<SUB>2</SUB> were measured in detail under a quasi-hydrostatic pressure of up to 7 GPa. Pt(dmg)<SUB>2</SUB> is an insulator with a resistivity of 10<SUP>15</SUP> Ω cm, and Pt(bqd)<SUB>2</SUB> is a semiconductor with 10<SUP>3</SUP> Ω cm at atmospheric pressure. A pressure-induced insulator (semiconductor)-to-metal transition was observed for both complexes. This transition arises from a crossing of the 5d<SUB>z<SUP>2</SUP></SUB> valence and 6p<SUB>z</SUB> conduction bands. When the pressure was further increasued, a metal-to-semiconductor transition took place at around the pressure that showed a resistivity minimum. A new pressure-induced absorption band was found in the visible region for the Pt complexes. The new band did not shift with pressure; the intensity of the band, however, increased with pressure over a narrow pressure region. The pressure-induced band may be due to intramolecular d–d transitions. The metal-to-semiconductor transition may arise from a change in the electronic states at high pressure, since no anomaly in the strucutre was observed.
- 公益社団法人 日本化学会の論文
著者
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Yagi Takehiko
The Institute For Solid State Physics The University Of Tokyo
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SHIROTANI Ichimin
Muroran Institute of Technology
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KAWAMURA Akira
Muroran Institute of Technology
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Utsumi Wataru
The Institute for Solid State Physics, The University of Tokyo
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Suzuki Kazunaga
Muroran Institute of Technology
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