Variation-tolerant CuxSiyO-based RRAM for low power application

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概要

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• An embedded Non-Volatile Resistive Memory IP with low power and high reliability is presented for application in RFID tags. The logic-based CuxSiyO resistive RAM employs a 2-transistor-2-resistor (2T2R) cell structure to reduce process variation and expand sensing margin. The feedback mechanism is adopted in the write process to prevent power consumption. A 64Kb RRAM IP is embedded in RFID tag test chip in 0.13µm logic process. Test results indicate that 6X margin is attained in resistance distribution at worst case and 22.2µW program power is achieved, which demonstrates the low power and variation-tolerant robustness.

著者

• Lin Yinyin

  Asic&system State Key Lab The Dept. Of Microelectronics Fudan University

• Jin Gang

  Asic&system State Key Lab The Dept. Of Microelectronics Fudan University

• Huang Ryan

  SOC Technology Development Center, Semiconductor Manufacturing International Corp.

• Min Hao

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Zou Qingtian

  SOC Technology Development Center, Semiconductor Manufacturing International Corp.

• Jian Wenxiang

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Yan Na

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Bi Zhongyu

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Wu Jingang

  SOC Technology Development Center, Semiconductor Manufacturing International Corp.

• Lin Yinyin

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Bi Zhongyu

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Jian Wenxiang

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

• Yan Na

  ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University

関連論文

• A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell
• Variation-tolerant CuxSiyO-based RRAM for low power application

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