CBrF<SUB>3</SUB>ガスを用いたTaの反応性イオンエッチング
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概要
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The reactive ion etching of tantalum is investigated with CBrF<SUB>3</SUB> gas plasma. The undercutting strongly depends on the gas pressure, and large undercutting is observed in a high-pressure region. To minimize undercutting, we have studied the effects of carbon atoms including polymerization gas. Undercutting decreases with an increase of carbon in the etching gas. A 0.15μm-wide tantalum pattern with a vertical sidewall is obtained by adjusting the carbon content. The formation of a tantalum pattern is simulated using the Monte Carlo method, taking into account the adsorption effects of polymerization gas.
- 日本真空協会の論文