X線回折法によるCu蒸着膜のエピタキシー温度の決定と焼鈍効果について

概要

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The epitaxial temperature of Cu films evaporated on a mica substrate has been studied using a conventional x-ray diffraction method. The epitaxial temperature determined by (111) integrated intensities was in the vicinity of 170°C. This result has been confirmed using the back-Laue method. The effect of annealing polycrystalline Cu films evaporated on a substrate kept below the epitaxial temperature has also been investigated by the x-ray diffraction method. By the changes in the (111) integrated intensities of Cu films annealed at higher temperatures a value of approximately 0.19eV was obtained as the activation energy of grain growth during the initial stages of the growth process.
日本真空協会の論文